Ultrawide bandgap gives material high-power potential
A Cornell collaboration has found a way to grow a single crystalline layer of alpha-aluminum gallium oxide that has the widest energy bandgap to date – a discovery that clears the way for new semiconductors that will handle higher voltages, higher power densities and higher frequencies than previously seen. The collaboration was led by co-senior authors Debdeep Jena and Huili Grace Xing, both professors in electrical and computer engineering and in materials science and engineering. The team also included David Muller, the Samuel B. Eckert Professor in Applied and Engineering Physics, who... Read more